The breakdown in a reverse biased p-n junction diode is more likely to occur due to

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Ram Sharma • 193.88K Points
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Q. The breakdown in a reverse biased p-n junction diode is more likely to occur due to

(A) large velocity of the minority charge carriers if the doping concentration is small
(B) large velocity of the minority charge carriers if the doping concentration is large
(C) strong electric field in a depletion region if the doping concentration is small
(D) none of these

Correct Answer - Option (B)

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