Q. 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES

  • (A) avalanche multiplication
  • (B) break down of depletion region
  • (C) high reverse saturation current
  • (D) none of the mentioned
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✅ Correct Answer: (A) avalanche multiplication
Explanation: a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair.

Published by Mr. Dubey ⭐ 110.47K Points at 13-Sep-2023 07:26 am in Antennas and Microwave Engineering

Explanation by: Mr. Dubey
a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair.

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