πŸ“Š Antennas and Microwave Engineering
Q. 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES
  • (A) avalanche multiplication
  • (B) break down of depletion region
  • (C) high reverse saturation current
  • (D) none of the mentioned
πŸ’¬ Discuss
βœ… Correct Answer: (A) avalanche multiplication

Explanation: a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair.


Explanation by: Mr. Dubey
a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair.

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